Experiment: Bipolar Transistors, 115 V
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Product Details
3B Scientific, UE3080200-115, Experiment for Electricity: Bipolar Transistors, 115 V, 50/60 HzUE3080200-115 Includes Only:Plug-in Board for ComponentsSet of 10 JumpersLinear Resistor, 1 kOhmLinear Resistor, 47 kOhmPotentiometer 220 Ohm, 3 W, P4W50Potentiometer 1 kOhm, 1 W, P4W50NPN Transistor, BD 137, P4W50Analogue Multimeter ESCOLA 30Set of 15 Experiment Leads, 75 cm 1 mm2;AC/DC Power Supply 0 − 12 V, 3 A (115 V, 50/60 Hz)Features:Objective: Messung der relevanten Kennlinien eines npn-TransistorsA bipolar transistor is an electronic component composed of three alternating p-doped and n-doped semiconductor layers called the base, the collector and the emitter. Depending on the sequence of the layers, the transistor may either be termed npn or pnp. The response of a bipolar transistor may be distinctively described by, for example, an input characteristic, a control characteristic and an output characteristic. In this experiment, examples of these are to be measured for an npn transistor, displayed on a graph and evaluated.For more information, please see Data Sheet.