Experiment: Field Effect Transistors

3B Scientific, UE3080300-115, Experiment for Electricity: Field Effect Transistors, 115 V, 50/60 HzUE3080300-115 Includes Only:Plug-in Board for ComponentsSet of 10 JumpersLinear Resistor, 1 kOhmLinear Resistor, 47 kOhmLinear Resistor, 470 kOhmElectrolytic Capacitor 470 µFFET Transistor, BF 244, P4W50Semiconductor Diodes, Si, 1000 VPotentiometer 220 Ohm, 3 W, P4W50Analogue Multimeter ESCOLA 30Set of 15 Experiment Leads, 75 cm 1 mm2;AC/DC Power Supply 0 − 12 V, 3 A (115 V, 50/60 Hz)Features:Objective: Measure the characteristics of a field effect transistorA field effect transistor (FET) is a semiconductor component in which electric current passes through a channel and is controlled by an electric field acting perpendicular to the channel. FETs have three contacts, called source, drain and gate due to their respective functions. If a voltage is applied between the source and the drain, then a drain current flows between the two. For small voltages between the drain and source, an FET acts like a simple ohmic resistor with a correspondingly linear characteristic. As the source-drain voltage increases, the channel becomes restricted and eventually is cut off entirely. The characteristic then enters an area of saturation. When the gate voltage is non-zero, the saturation value of the drain current decreases.For more information, please see Data Sheet.